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• W1567366311 abstract "High-k insulator films of HfO2, Y2O3, and CeO2, were prepared on Nd2Ti2O7 (NT) ferroelectric to form metal-ferroelectric-insulator-semiconductor structures. The NT is a candidate ferroelectric material for use in a metal-ferroelectric-insulator-semiconductor field effect transistor (FET) with low permittivity and a high coercive field. Our work involves understanding the relationships between retention property and permittivity and the insulation properties of insulator layer, including interface. HfO2 possesses a relatively low leakage current and a better retention property than Y2O3 and CeO2. The insulating property from a stable interface was found to be the most important controlling factor for the ferroelectric FET." @default.
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• W1567366311 date "2011-01-01" @default.
• W1567366311 modified "2023-10-16" @default.
• W1567366311 title "Comparative Studies of HfO2, Y2O3, and CeO2Insulators in Metal-Nd2Ti2O7Ferroelectric-Insulator-Semiconductor Structures" @default.
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• W1567366311 doi "https://doi.org/10.1080/00150193.2011.618375" @default.
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