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- W1567423245 abstract "In a previous paper, we described a method for growing thick epitaxial layers of GaAs on orientation-patterned wafers by low pressure hydride vapor phase epitaxy. The low pressure method allows for rapid growth at rates well above 100 mum/hr and layers up to 1 mm thick have been successfully produced. In this paper we present characterization of these layers by optical microscopy, Hall measurement, and cathodoluminescence imaging. We demonstrate growth of low free carrier concentration, mm-thick orientation-patterned GaAs for efficient nonlinear optical conversion" @default.
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- W1567423245 date "2006-05-25" @default.
- W1567423245 modified "2023-09-23" @default.
- W1567423245 title "Characterization of HVPE-Grown Thick GaAs Structures for IR and THz Generation" @default.
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- W1567423245 doi "https://doi.org/10.1109/iciprm.2006.1634134" @default.
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