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• W1567707272 abstract "In this work, a new compact SONOS Flash EEPROM device with fast programming, high reliability, and uniform erase is demonstrated. This device has been embedded into a 90 nm high performance CMOS logic process with an advanced copper backend. This device utilizes hot electron injection for programming and uniform channel tunneling for erase. Uniform tunnel erase prevents residual electron build up over the channel and avoids the reliability concerns of hot hole erase. A single bit is stored in each nonvolatile memory transistor." @default.
• W1567707272 created "2016-06-24" @default.
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• W1567707272 date "2003-06-26" @default.
• W1567707272 modified "2023-10-10" @default.
• W1567707272 title "An embedded 90 nm SONOS nonvolatile memory utilizing hot electron programming and uniform tunnel erase" @default.
• W1567707272 cites W1837605946 @default.
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• W1567707272 doi "https://doi.org/10.1109/iedm.2002.1175988" @default.
• W1567707272 hasPublicationYear "2003" @default.
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