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• W1567767420 abstract "CuInSe2 films with different compositions around stoichiometry have been deposited by coevaporation of Cu, In and Se. In p-type films the electrical conductivity is largely dependent on the Cu-In percentage ratio and increases from 10-6 to 102 S cm-1 when the ratio increases from 0.66 to 1.58. The thermal activation energy is also correlated to this ratio, and decreases from 0.36 to 0.009 eV. The results are analogous to those obtained in polycrystalline silicon and are qualitatively explained by the grain boundary carrier trapping theory." @default.
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• W1567767420 date "1984-12-14" @default.
• W1567767420 modified "2023-09-26" @default.
• W1567767420 title "Electrical conductivity of polycrystalline CuInSe₂thin films" @default.
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• W1567767420 doi "https://doi.org/10.1088/0022-3727/17/12/010" @default.
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