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- W1567800799 abstract "The dependence of the inversion charge on the gate voltage in MOS structures has the same behaviour like the diffusion current versus the applied voltage in a pn doped junction. As a similarity, the terms low level and high-level of injection are extended over the MOS operation. The paper determinates the surface potential, /spl phi//sub C/, that separates the two regimes and demonstrates that its values are greater than the surface potential 2/spl phi//sub /B with 111...132 m V, for the usual doping concentration of the substrate. These results permit to use the low-level of injection model in MOS structures even in strong inversion condition." @default.
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- W1567800799 date "2003-01-20" @default.
- W1567800799 modified "2023-09-25" @default.
- W1567800799 title "The onset of the high level of injection in MOS structures" @default.
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- W1567800799 doi "https://doi.org/10.1109/smicnd.1999.810451" @default.
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