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• W1567996011 abstract "In this work we report on the development of the atomic layer deposition (ALD) process with tetrakisdiethylamino (TDEA) hafnium/zirconium (TDEAH/TDEAZ) and . A nanolaminar structure approach is used to grow by alternating and ALD reaction cycles at . The film thickness increases linearly with the number of ALD cycles. Compared to the halide based process, the process with TDEA precursors and yields a lower temperature window, an initial growth insensitive toward the starting surfaces, and a fast film closure on the hydrofluoric acid-last surface. The Zr content, measured by Rutherford backscattering increases linearly with the cycle ratio of . The as-deposited films are amorphous and crystallize after a postdeposition anneal. Depending on the film composition a different crystalline phase is formed, ranging from monoclinic to tetragonal with increasing Zr content. Using instead of not only reduces the interfacial oxide regrowth during deposition, which allows for a thinner interfacial layer and improves the interfacial oxide scalability, but also results in a lower C content in the deposited films. Finally, complementary metal oxide semiconductor transistor using as gate dielectric are fabricated for the evaluation of device performance. These results show that all considered splits with as gate dielectric yield a similar equivalent oxide thickness-gate leakage current performance and (low) gate current leakage level. The data reported in this paper demonstrates that ALD grown based on and is a promising gate dielectric for subnanometer equivalent oxide thickness scaling." @default.
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• W1567996011 date "2011-01-01" @default.
• W1567996011 modified "2023-10-16" @default.
• W1567996011 title "Development of ALD HfZrO[sub x] with TDEAH/TDEAZ and H[sub 2]O" @default.
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• W1567996011 doi "https://doi.org/10.1149/1.3516476" @default.
• W1567996011 hasPublicationYear "2011" @default.
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