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- W1569113961 abstract "This chapter explores Electrostatic Discharge (ESD) signal pin networks. It focuses on the integration of the ESD signal pin with the bond pad. For ESD networks, and for the offchip driver circuitry, almost every feature of the MOSFET design is optimized for ESD robustness. The chapter discusses the key parameters for ESD design of MOSFETs. Diodes have significant value for CMOS digital, analog, and RF applications. Silicon controlled rectifiers, also known as pnpn devices, are used for ESD signal pins and ESD power clamp circuits. Resistor elements are also used for input and output circuits for both functional and ESD requirements. In the ESD design synthesis of radio frequency (RF) components, inductors are being introduced into the ESD signal pin design synthesis. Controlled Vocabulary Terms CMOS analog integrated circuits; diodes; electrostatic discharge; MOSFET; MOSFET circuits; solid-state rectifiers" @default.
- W1569113961 created "2016-06-24" @default.
- W1569113961 creator A5028723740 @default.
- W1569113961 date "2011-03-11" @default.
- W1569113961 modified "2023-10-17" @default.
- W1569113961 title "ESD Signal Pin Networks Design and Synthesis" @default.
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- W1569113961 doi "https://doi.org/10.1002/9781119991137.ch5" @default.
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