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• W1569168610 abstract "We have investigated the growth and the optical properties of GaAsSbN alloys and quantum wells. The material was grown on GaAs by molecular beam epitaxy with a nitrogen plasma source. We have carefully examined the nitrogen incorporation rate, and we found that it is enhanced by the presence of Sb. Similarly to GaAsN or GaInAsN, this material exhibits a strong band gap bowing allowing a significant band gap reduction with a low N content. We show that this material is an interesting alternative to InGaAsN to develop 1.3 /spl mu/m and 1.55 /spl mu/m laser sources on GaAs substrate: a GaAs/sub 0.836/Sb/sub 0.14/N/sub 0.024//GaAs quantum well has exhibited a room temperature photoluminescence peak wavelength as long as 1.6 /spl mu/m. This emission is shifted to 1.5 /spl mu/m after post-growth annealing. Electroluminescence spectra are also presented." @default.
• W1569168610 created "2016-06-24" @default.
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• W1569168610 date "2002-11-07" @default.
• W1569168610 modified "2023-09-26" @default.
• W1569168610 title "GaAsSbN: a material for 1.3-1.55 μm emission" @default.
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• W1569168610 doi "https://doi.org/10.1109/iciprm.2000.850357" @default.
• W1569168610 hasPublicationYear "2002" @default.
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