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- W1569285465 abstract "A wide variety of optoelectronic devices such as photovoltaic (including solar cells and photo detectors), photoemitting (including lasers) and photocatalytic devices have been developed for more than five decades. The physical nature of such devices, especially operated with visible and near-infrared light, is electronic transitions between pairs of energy levels, typically in semiconductors. In addition to the conduction band and the valence band, defect levels, i.e., localized energy levels associated with nanostructures and lattice defects, are responsible for the electronic transitions. Various kinds of nanostructures can be fabricated, spontaneously or artificially, inside and onto semiconductors. Also, lattice defects, such as point defects (including vacancies, interstitials, dopant and impurity atoms) and extended defects (including grain boundaries, stacking faults, dislocations, and point defect clusters), can be introduced, inevitably or accidentally, during crystal growth and device fabrication processes. Therefore, in order to fabricate optoelectronic devices with advanced and ultimate functions, the structural properties of semiconductor nanostructures and defects, as well as their optoelectronic properties such as the possible presence of defect levels, should be understood with a high spatial resolution simultaneously with a high spectral resolution. Optical measurements such as luminescence and photoabsorption spectroscopy are powerful techniques to determine defect levels. Since the spectral resolution is higher than the order of 10−3 eV, this techniques are useful to study the energy levels in the low energy range between the band edges of semiconductors (of the order of 100 eV at most), which dominate the optoelectronic properties of the device products made of the materials. Therefore, when the measurements are performed in a transmission electron microscope (TEM), such as near-field optical measurements in a TEM (Ohno, 2010a), we can examine the optoelectronic properties simultaneously with the structural properties in small regions observed in-situ with the TEM. With an extremely high spectral resolution in comparison with the other spectroscopic techniques in TEM, such as energy dispersive x-ray spectroscopy (e.g., Terauchi et al, 2010) and electron energy-loss spectroscopy (e.g., Kikkawa et al, 2007) with a resolution less than about 10-1 eV, the optical measurements in TEM enable us to assess in detail defect levels in" @default.
- W1569285465 created "2016-06-24" @default.
- W1569285465 creator A5002127145 @default.
- W1569285465 creator A5041415559 @default.
- W1569285465 creator A5064451344 @default.
- W1569285465 date "2011-04-19" @default.
- W1569285465 modified "2023-10-02" @default.
- W1569285465 title "In-Situ Analysis of Optoelectronic Properties of Semiconductor Nanostructures and Defects in Transmission Electron Microscopes" @default.
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