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• W1569397749 abstract "Strained Ge p-channel FinFETs on Strain Relaxed SiGe are integrated for the first time on high density 45nm Fin pitch using a replacement channel approach on Si substrate. In comparison to our previous work on isolated sGe FinFETs [1], 14/16nm technology node compatible modules such as replacement metal gate and germanide-free local interconnect were implemented. The I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> /I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OFF</sub> benchmark shows the high density strained Ge p-FinFETs in this work outperform the best published isolated strained Ge on SiGe devices." @default.
• W1569397749 created "2016-06-24" @default.
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• W1569397749 date "2015-06-01" @default.
• W1569397749 modified "2023-10-01" @default.
• W1569397749 title "Strained germanium quantum well p-FinFETs fabricated on 45nm Fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect" @default.
• W1569397749 cites W1990928913 @default.
• W1569397749 doi "https://doi.org/10.1109/vlsit.2015.7223701" @default.
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