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- W1569790645 abstract "The minimum energy of the first conduction subband varies with gate voltage in trigate SOI MOSFETs in subthreshold operation. In an inversion-mode device, the energy level of the lowest subband increases when the electron concentration increases, while it decreases under the same conditions in some accumulation-mode devices. As a result of this quantum effect, the subthreshold swing of accumulation-mode trigate FETs is smaller than predicted by classical theory, while that of inversion-mode devices is higher. This effect is not observed in FinFETs and GAA MOSFETs and can be amplified by modifying the device cross section." @default.
- W1569790645 created "2016-06-24" @default.
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- W1569790645 date "2008-01-01" @default.
- W1569790645 modified "2023-09-27" @default.
- W1569790645 title "Influence of Carrier Confinement on the Subthreshold Swing of Multigate SOI MOSFETs" @default.
- W1569790645 hasPublicationYear "2008" @default.
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