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• W1570334102 abstract "Degenerately doped (&gt;1019 cm−3) n-type InxGa1−xAs (x∼0.67) and InPyAs1−y (y∼0.65) possess a number of intriguing electrical and optical properties relevant to electro-optic devices and thermophotovoltaic devices in particular. Due to the low electron effective mass of these materials (m*&lt;0.2) and the demonstrated ability to incorporate n-type dopants into the high 1019 cm−3 range, both the Moss–Burstein band gap shift and plasma reflection characteristics are particularly dramatic. For InGaAs films with a nominal undoped band gap of 0.6 eV and N=5×1019 cm−3, the fundamental absorption edge increased to 1.27 eV. InPAs films exhibit a shorter plasma wavelength (λp∼5 μm) in comparison to InGaAs films (λp∼6 μm) with similar doping concentrations. The behavior of the plasma wavelength and the fundamental absorption edge are investigated in terms of conduction band nonparabolicity and Γ-L valley separation using detailed band structure measurements and calculations." @default.
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• W1570334102 date "1999-07-01" @default.
• W1570334102 modified "2023-09-27" @default.
• W1570334102 title "Moss–Burstein and plasma reflection characteristics of heavily doped <i>n</i>-type InxGa1−xAs and InPyAs1−y" @default.
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• W1570334102 doi "https://doi.org/10.1063/1.370751" @default.
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