Matches in SemOpenAlex for { <https://semopenalex.org/work/W1570603963> ?p ?o ?g. }
- W1570603963 abstract "Deep-level defects remaining in the upper half of the band-gap of silicon implanted with protons at fluences and annealing temperatures typically used for proton-implantation doping are investigated. For proton fluences in the range of several 1013 cm−2 to several 1014 cm−2, a multitude of deep-level defects remain active in comparatively high concentrations of up to 1013 cm−3 even after anneals at temperatures up to 500 °C. The detected deep-levels are assigned to known lattice defects on the basis of their electrical characteristics obtained by Fourier-transform DLTS measurements. Despite the low oxygen content of the float-zone silicon used, a large number of the detected defects are ascribed to (non-)hydrogenated vacancy-oxygen defects. The annealing temperature ranges, in which the deep-level defects were detected, are shown. Furthermore, the dependencies of the deep-level defects on the proton fluence and their depth distributions in the implantation profile are investigated." @default.
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- W1570603963 date "2014-09-04" @default.
- W1570603963 modified "2023-09-27" @default.
- W1570603963 title "DLTS characterization of proton-implanted silicon under varying annealing conditions" @default.
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- W1570603963 doi "https://doi.org/10.1002/pssb.201400028" @default.
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