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• W1570679204 abstract "This letter reports the effects of Ca doping into Cu films, which was used as a source/drain (S/D) electrode for high performance amorphous In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) with a low resistive-capacitive delay time. The IGZO TFTs with Ca-doped Cu S/D exhibited three times higher saturation mobility (16 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /Vs) and substantially lower subthreshold gate swing of 0.39 V/decade than the control devices with pure Cu S/D. The SIMS profile and cross-sectional transmission electron microscopy showed that Ca effectively prevented the Cu atoms from diffusing into channel IGZO region presumably as a result of Ca-O bond formation, which is responsible for their superior device performances." @default.
• W1570679204 created "2016-06-24" @default.
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• W1570679204 date "2015-08-01" @default.
• W1570679204 modified "2023-09-26" @default.
• W1570679204 title "Improvement in Device Performance of a-InGaZnO Transistors by Introduction of Ca-Doped Cu Source/Drain Electrode" @default.
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• W1570679204 doi "https://doi.org/10.1109/led.2015.2445348" @default.
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