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- W1570816756 abstract "Highly uniform AlGaAsGaAs and InGaAs(P)InP epitaxial layers have been grown in a vertical rotating susceptor MOVPE reactor capable of accommodating three 2′ wafers. The unique water-cooled “showerhead”-type injection distributor which is located 1.5 cm above the substrates ensures a uniform reactant distribution, resulting in uniform growth over a wide range of growth conditions. Periodic multilayer and single layer structures have been used to investigate the thickness and compositional uniformities. The thickness variations over a radial distance of 48 mm for three wafers grown in the same run are within ± 2% for both AlGaAs and InGaAs layers, resulting in a standard deviation of only 0.9%. The gallium concentration of an InGaAs layer varies from 46.88% to 47.01% over the same radial distance with the standard deviation of 0.043%. Measurements of InGaAsP layers grown onto 2′ InP wafers with different alloy compositions show good compositional uniformity yielding standard deviations within 4.4 nm in PL wavelength and 135 ppm in lattice mismatch over a 46 mm radial distance." @default.
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- W1570816756 date "1997-01-01" @default.
- W1570816756 modified "2023-10-14" @default.
- W1570816756 title "Highly uniform and structures grown in a multiwafer vertical rotating susceptor MOVPE reactor" @default.
- W1570816756 cites W2025185454 @default.
- W1570816756 doi "https://doi.org/10.1016/s0022-0248(96)00603-3" @default.
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