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- W1570883889 abstract "We propose a new discrete trap memory with double tunnel junction where we can control trapped electron density by stoichiometry control of charge store part. This memory has less than 3 nm EOT tunnel oxide, and can retain a high trapped electron number density 10/sup 12/ cm/sup -2/, which is critical one for future scaling, for 10 years after low field w/e. It is concluded that stoichiometry control of charge store part in double junction memory is very promising method for future scaling." @default.
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- W1570883889 date "2005-04-19" @default.
- W1570883889 modified "2023-10-16" @default.
- W1570883889 title "Impact of stoichiometry control in double junction memory on future scaling" @default.
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- W1570883889 doi "https://doi.org/10.1109/iedm.2004.1419325" @default.
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