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- W1571400789 abstract "There have been numbers of examples where metal-insulator transition is induced at the interfaces of correlated oxides by tiny stimuli such as electric field, photo-irradiation, and magnetic field. These phenomena provide potential functionalities for the application of non-volatile memories, switches, sensors, and photovoltaics. In this chapter, the author studies numbers of heterostructures comprised of transition metal oxides and found some similarities to but also limitations for the rigid band model to describe the connection of two different electronic structures. The system includes half doped manganites, robust Mott insulators of manganites and cuprates, spin-peierls vanadium oxide (VO2) and correlated electrons in band insulators. The insulator metal transition can be easily tuned by doping, photo-irradiation and electric field. On the other hand it is elucidated to be very robust against quantum confinement. The chapter also discusses the band lineup of VO2 and other materials in view of solar cell and transistor application. Controlled Vocabulary Terms electronic structure; metal-insulator transition; strongly correlated electron systems; vanadium compounds" @default.
- W1571400789 created "2016-06-24" @default.
- W1571400789 creator A5024419745 @default.
- W1571400789 date "2012-06-19" @default.
- W1571400789 modified "2023-10-01" @default.
- W1571400789 title "Metal-Insulator Transitions of Correlated Electrons in Oxide Heterostructures" @default.
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- W1571400789 doi "https://doi.org/10.1002/9783527667703.ch24" @default.
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