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- W1571451702 abstract "Effects of electro-less Ni layer as barrier/seed layers were evaluated for high reliable and low cost Cu TSVs. To electrically characterize the effectiveness of a Ni layer as barrier/seed layers for TSV application, we fabricated the trench MOS capacitor with 5µm dia. and 50µm depth TSV array. Via holes were successfully filled by Cu electro-plating by using Ni seed layer. To characterize the blocking property of the Ni layer to Cu diffusion, Cu atoms were intentionally diffused from Cu TSV by annealing at 300°C and 400°C. X-ray spectrometer (EDX) and C-t analysis results shows that Cu atoms not diffuse into t h e Si substrate via the Ni layer even after annealing at 400°C. The Ni barrier layer has good blocking properties compared to a PVD barrier layer." @default.
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- W1571451702 date "2014-12-01" @default.
- W1571451702 modified "2023-10-01" @default.
- W1571451702 title "Effects of electro-less Ni layer as barrier/seed layers for high reliable and low cost Cu TSV" @default.
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- W1571451702 doi "https://doi.org/10.1109/3dic.2014.7152153" @default.
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