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• W1572318072 abstract "A 90 nm DRAM technology has been successfully developed using 512 Mb DRAM for the first time. ArF lithography is used for printing critical layers with resolution enhancement techniques. A novel gap-filling technology using spin coating oxide is developed for STI and ILD processes. A diamond-shaped storage node is newly developed for large capacitor area with better mechanical stability. A CVD Al process can make the back-end metallization process simple and easy. A dual gate oxide scheme can provide independent optimization for memory cell transistor and periphery support device so that the off-state leakage current of the cell transistor can be maintained below 0.1 fA." @default.
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• W1572318072 date "2003-06-25" @default.
• W1572318072 modified "2023-09-23" @default.
• W1572318072 title "Highly manufacturable 90 nm DRAM technology" @default.
• W1572318072 cites W1837914040 @default.
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• W1572318072 doi "https://doi.org/10.1109/iedm.2002.1175963" @default.
• W1572318072 hasPublicationYear "2003" @default.
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