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- W1572667770 abstract "Publisher Summary This chapter discusses the usefulness of high-pressure techniques in experimental studies of defects in wide bandgap semiconductor gallium nitride (GaN). Si and O are the natural candidates for donor impurities in group III nitrides. For this purpose, Si substitutes cations (Ga, Al, and In) and O replaces nitrogen. The natural question concerning the nature of states formed by Si and O donors in GaN appears when the situations in other III–V semiconductors are considered. In GaAs, for example, the donors (from group IV as well as from group VI) form resonant electronic states with different amounts of localization. There are states with hydrogenic character, as well as very localized states. They can coexist in the crystal. The most famous donor states, produced—for example, by Si—are known as “metastable DX centers.” A deep mid-gap localized state is involved in the mechanism of the parasitic luminescence that introduces an efficient radiative recombination channel, which can compete with the band-edge luminescence." @default.
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- W1572667770 date "1997-01-01" @default.
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- W1572667770 title "Chapter 10 High Pressure Studies of Defects and Impurities in Gallium Nitride" @default.
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- W1572667770 doi "https://doi.org/10.1016/s0080-8784(08)63091-4" @default.
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