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- W1573245283 abstract "This report describes the memory effect of an Al/sub 0.5/Ga/sub 0.5/As/GaAs field-effect (FE) structure which contains vertically aligned InAs nanodots in the barrier layer. The FE structure is grown by molecular beam epitaxy using Stranski-Krastanow islands as the nanodots. Charge storage effect of the nanodots is analyzed by a capacitance-voltage measurement and resulted in a hysteresis loop due to the stable electron trapping at nanodot potentials. The amount of charge for the long-term memory retention at 300 K is estimated to be /spl sim/14 nC/cm/sup 2/, which is promising for memory device applications of the FE structure." @default.
- W1573245283 created "2016-06-24" @default.
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- W1573245283 date "2002-11-13" @default.
- W1573245283 modified "2023-09-26" @default.
- W1573245283 title "Charge storage effect of the vertically stacked InAs nanodots embedded in Al/sub 0.5/Ga/sub 0.5/As matrix" @default.
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- W1573245283 doi "https://doi.org/10.1109/iciprm.2001.929013" @default.
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