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• W1573272292 abstract "Amorphous Lu2O3 thin films have been deposited on p-type (111) Si substrates by pulsed laser deposition (PLD). A equivalent oxide thickness (EOT) of 1.16 nm with a leakage current density of 4×10−5 A/cm2 at 1 V accumulation bias was obtained for 4.5 nm thick Lu2O3 thin film deposited at room temperature followed by post-deposition anneal (PDA) at 600 °C in oxygen ambient. The leakage conduction mechanisms of amorphous Lu2O3 films were investigated. It was found that the Poole-Frenkel (P-F) emission is the dominant conduction mechanism at high electric field region." @default.
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• W1573272292 date "2007-03-01" @default.
• W1573272292 modified "2023-09-26" @default.
• W1573272292 title "Leakage conduction mechanism of amorphous Lu 2 O 3 high-k dielectric films fabricated by pulsed laser ablation" @default.
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• W1573272292 doi "https://doi.org/10.1209/0295-5075/77/67001" @default.
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