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• W1574178061 abstract "Te ions existed as in the (BTT) film grown at under a high oxygen pressure (OP) of and contributed to the formation of the crystalline BTT phase after subsequent annealing at . However, for the BTT film grown under a low OP of (or ), ions, were converted to ions, which induced the phase transition of the BTT phase to the pseudo- and pseudo- phases after annealing at . The leakage current density decreased with increasing OP during the growth due to the decreased number of oxygen vacancies. The breakdown voltage also improved with increasing OP during the deposition. The Mn ions introduced in the BTT films by Mn doping existed as or and acted as the acceptors. This Mn doping to also reduced the leakage current density and increased the breakdown voltage by decreasing the number of intrinsic oxygen vacancies." @default.
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• W1574178061 date "2008-01-01" @default.
• W1574178061 modified "2023-09-27" @default.
• W1574178061 title "Oxygen Pressure and Mn-Doping Effects on the Structure and Leakage Current of Bi[sub 6]Ti[sub 5]TeO[sub 22] Thin Film" @default.
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• W1574178061 doi "https://doi.org/10.1149/1.2960863" @default.
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