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- W1574643456 abstract "Abstract : The research goal is to further develop quantum well heterostructure (QWH) lasers and to realize reliable Al(x)Ga(1-x)As-GaAs QWH lasers on Si. In spite of the significant lattice and thermal expansion mismatch between GaAs and Si, the idea of splicing III-V semiconductor technology, i.e., optoelectronics and photonics, onto Si has obvious appeal. Adding to this is the fact, as shown earlier in this work, that cw 300 K Al(x)Ga(1-x)As-GaAs QWH lasers can be grown on Si, and that the Si substrate serves as a better heat sink than GaAs. This makes possible the right-side-up heat sinking needed for electronic-photonic integrated circuits. This report contains research results on quantum well heterostructures on Si, impurity-induced layer disordering, phonon-assisted laser operations and other laser studies. (jhd)" @default.
- W1574643456 created "2016-06-24" @default.
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- W1574643456 date "1989-12-01" @default.
- W1574643456 modified "2023-09-24" @default.
- W1574643456 title "III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices on Silicon" @default.
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