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• W1575310174 endingPage "024201" @default.
• W1575310174 startingPage "024201" @default.
• W1575310174 abstract "We report that a Ni–InGaAs alloy can be used as a source/drain (S/D) metal for InGaAs metal–oxide–semiconductor field-effect transistors (MOSFETs), allowing us to employ the salicide-like self-align S/D formation. We also introduce Schottky barrier height (SBH) engineering process by increasing the indium content of InxGa1-xAs channels, which successfully reduces SBH down to zero. We propose a fabrication process for self-aligned metal S/D MOSFETs using Ni–InGaAs and demonstrate successful operation of the metal S/D InxGa1-xAs MOSFETs. The In0.7Ga0.3As MOSFETs exhibit an S/D resistance (RSD) that is 1/5 lower than that in P–N junction devices and a high peak mobility of 2000 cm2 V-1 s-1." @default.
• W1575310174 created "2016-06-24" @default.
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• W1575310174 date "2011-01-21" @default.
• W1575310174 modified "2023-10-01" @default.
• W1575310174 title "Self-Aligned Metal Source/Drain In_<i>x</i>Ga_1-<i>x</i>As n-Metal–Oxide–Semiconductor Field-Effect Transistors Using Ni–InGaAs Alloy" @default.
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• W1575310174 doi "https://doi.org/10.1143/apex.4.024201" @default.
• W1575310174 hasPublicationYear "2011" @default.
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