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• W1575804003 abstract "Defects in p-GaN and their atomic structure Z. Liliental-Weber, T. Tomaszewicz, D. Zakharov, J. Jasinski and M. O’Keefe Lawrence Berkeley National Lab, Berkeley, CA In this paper defects formed in p-doped GaN:Mg grown with Ga polarity will be discussed. The atomic structure of these characteristic defects (Mg-rich hexagonal pyramids and truncated pyramids) in bulk and thin GaN:Mg films grown with Ga polarity was determined at atomic resolution by direct reconstruction of the scattered electron wave in a transmission electron microscope. Small cavities were present inside the defects. The inside walls of the cavities were covered by GaN which grew with reverse polarity compared to the matrix. It was proposed that lateral overgrowth of the cavities restores matrix polarity on the defect base. Exchange of Ga and N sublattices within the defect compared to the matrix lead to a 0.6±0.2A displacement between the Ga sublattices of these two areas. A [1100]/3 shift with change from AB stacking in the matrix to BC within the entire pyramid is observed 1. Introduction P-doping of GaN remains still difficult and not well understood. Mg remains the most efficient p- dopant but the free hole concentration is limited to 2x10 18 cm -3 for Mg concentrations in the low 10 19 cm -3 range. This could limit further development of GaN based devices. Further increase of the Mg concentration, up to 1x10 20 cm -3 leads to a decrease of the free hole concentration. This is commonly interpreted as auto-compensation due to increased formation of N vacancies or vacancy complexes with Mg [1]. Another characteristic feature is the occurrence of the so-called “blue band” in the photoluminescence spectra of highly Mg-doped GaN grown by MOVPE [2]. 2. TEM studies of defects in bulk and MOCVD grown GaN:Mg layers Transmission electron microscopy (TEM) studies show the formation of different types of Mg– rich defects, both in bulk crystals grown from Ga excess under high N-pressure and in crystals grown by MOCVD [3-6]. The types of the defects strongly depend on crystal growth polarity (Fig. 1a). For bulk crystals grown with N-polarity, the planar defects (shown on Fig. 1a as lines) are distributed at equal distances (20 unit cells of GaN). These defects were described as inversion domains [6]. (a) (b 100 nm Fig. 1. (a) Schematic drawing shows defect distribution in a bulk GaN samples together with atom arrangement indicating crystal polarity; (b) TEM micrograph of defects in [1120] projection. For growth with Ga-polarity (for both bulk and MOCVD grown crystals) two different types of defects have been found [4-6]. One, three-dimensional Mg-rich hexagonal pyramids with their base on the (0001) plane and six walls formed on {1123} planes and the second, truncated pyramids (Fig. 1b). TEM micrographs of these defects in cross-section and plan-view are shown on Fig. 2(a-f). The direction from" @default.
• W1575804003 created "2016-06-24" @default.
• W1575804003 creator A5000700959 @default.
• W1575804003 creator A5028794636 @default.
• W1575804003 creator A5056379090 @default.
• W1575804003 creator A5064515533 @default.
• W1575804003 creator A5078488878 @default.
• W1575804003 date "2004-10-08" @default.
• W1575804003 modified "2023-10-17" @default.
• W1575804003 title "Defects in p-GaN and their atomic structure" @default.
• W1575804003 hasPublicationYear "2004" @default.
• W1575804003 type Work @default.
• W1575804003 sameAs 1575804003 @default.
• W1575804003 citedByCount "0" @default.
• W1575804003 crossrefType "proceedings" @default.
• W1575804003 hasAuthorship W1575804003A5000700959 @default.
• W1575804003 hasAuthorship W1575804003A5028794636 @default.
• W1575804003 hasAuthorship W1575804003A5056379090 @default.
• W1575804003 hasAuthorship W1575804003A5064515533 @default.
• W1575804003 hasAuthorship W1575804003A5078488878 @default.
• W1575804003 hasBestOaLocation W15758040032 @default.
• W1575804003 hasConcept C185592680 @default.
• W1575804003 hasConcept C192562407 @default.
• W1575804003 hasConcept C49040817 @default.
• W1575804003 hasConceptScore W1575804003C185592680 @default.
• W1575804003 hasConceptScore W1575804003C192562407 @default.
• W1575804003 hasConceptScore W1575804003C49040817 @default.
• W1575804003 hasLocation W15758040031 @default.
• W1575804003 hasLocation W15758040032 @default.
• W1575804003 hasLocation W15758040033 @default.
• W1575804003 hasOpenAccess W1575804003 @default.
• W1575804003 hasPrimaryLocation W15758040031 @default.
• W1575804003 hasRelatedWork W1531601525 @default.
• W1575804003 hasRelatedWork W1990781990 @default.
• W1575804003 hasRelatedWork W2058676402 @default.
• W1575804003 hasRelatedWork W2329285141 @default.
• W1575804003 hasRelatedWork W2748952813 @default.
• W1575804003 hasRelatedWork W2899084033 @default.
• W1575804003 hasRelatedWork W2902546961 @default.
• W1575804003 hasRelatedWork W2948807893 @default.
• W1575804003 hasRelatedWork W4313653414 @default.
• W1575804003 hasRelatedWork W2778153218 @default.
• W1575804003 isParatext "false" @default.
• W1575804003 isRetracted "false" @default.
• W1575804003 magId "1575804003" @default.
• W1575804003 workType "paratext" @default.