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- W1577029651 abstract "Intel is aggressively pursuing the use of 157 nm lithography for the 0.1 mm patterning node. Two areas of concentration have been in photoresist and reticle materials development. Over the six months, we have seen considerable progress in new materials development in both areas. In the photoresist area, the use of ultra-thin resists of currently used chemistries appear to be capable of providing short-term layer development and tool testing patterning capability. We have obtained imaging results using a 0.5 NA Schwartzchild optics system. Our best result to data show 70-80 nm lines printed on a pitch of 180 nm. While this small field system has considerably immature optics, it can be used effectively to do basic resist development. In the area of reticle materials development, we have seen considerable improvement in the reduction of OH in blank materials, resulting in higher transmission. We expect to see substrates with greater than 80 percent transmission within the next year at the current rate of accelerated progress. Furthermore, we are not seeing any major processing differences with these new blank materials. Overall, we have seen an accelerated pace of learning in materials development for both resist and new blank materials. Overall, we have seen an accelerated pace of learning in materials development for both resist and reticle materials for 157 nm lithography." @default.
- W1577029651 created "2016-06-24" @default.
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- W1577029651 date "2000-07-05" @default.
- W1577029651 modified "2023-09-22" @default.
- W1577029651 title "Progress in 157-nm lithography development at Intel: resists and reticles" @default.
- W1577029651 doi "https://doi.org/10.1117/12.389005" @default.
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