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- W1577513763 abstract "Optical (Photo) lithography has played a significant role in almost every aspects of modern micro-fabrication technology in the recent years. It has initiated transistor revolution in electronics and optical component developments in photonics. Advances in this field have allowed scientists to improve the resolution of the conventional photolithographic techniques, which is restricted by the diffraction limit [Okazaki, 1991]. To overcome this problem and to reduce the critical dimension, several solutions were introduced. New research suggests that we may be able to develop new low cost photolithographic technique beyond the diffraction limit. The minimum critical dimension (half-pitch resolution) achievable by photolithography (Optical projection lithography) is given by 1 / half pitch CD k NA λ − = , where λ is the incident source wavelength, NA is the numerical aperture of projection optics of the system and 1 k is a constant value as a indication of the effectiveness of the wavefront engineering techniques. To reduce the half-pitch resolution, critical dimension equation demands either to decrease the wavelength of illumination light source or to increase the numerical aperture of projection system. Or in short, fabrication of sub-100nm features generally imposes the requirement of shorter wavelength laser sources. In this context, the critical challenges that hinder the resolution enhancement approaches are (i) lack of availability of suitable ultra-short wavelength lasers, and (ii) the unavailability of suitable optics and materials such as photoresist for use at suitable wavelengths. Recently, techniques like extreme ultraviolet lithography (EUV) [Gwyn et al., 1998] and Xray lithography [Silverman, 1998] have been proposed for nanofabrication overcoming the diffraction limit. Here, the illumination wavelength is reduced to the extreme UV (smaller wavelength) to get smaller features. Another reported technique is the immersion lithography in which numerical aperture of the imaging system is increased by inserting high index fluids (prism or liquid) between last optical component and wafer surface [Wu, et al., 2007]. But this technique is either limited by air absorption or availability of high index fluids. Approaches such as electron-beam lithography can also be used to overcome diffraction limit, but these are serial process and cannot be used for high throughput [Chen et al., 2005]. Imprint lithography is another option to improve the resolution beyond the diffraction limit [McAlpine et al., 2003]. Nanometer scale features are possible by stamping a" @default.
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- W1577513763 date "2010-02-01" @default.
- W1577513763 modified "2023-10-03" @default.
- W1577513763 title "Metal Particle-Surface System for Plasmonic Lithography" @default.
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- W1577513763 doi "https://doi.org/10.5772/8195" @default.
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