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• W1579870180 abstract "Thin films of MgO and BaTiO3 were deposited on (001) GaAs substrates using molecular beam epitaxy and pulsed laser deposition, respectively. X-ray diffraction scans indicate crystalline MgO and BaTiO3 thin films with preferential c-axis orientation. Capacitors fabricated from the BaTiO3∕MgO∕GaAs structures demonstrate ferroelectric hysteresis behavior with a remenant polarization of 0.4μC∕cm2. Small-signal capacitance measurements indicate an effective dielectric constant for the BaTiO3∕MgO structure of 45.5ε0. A hysteresis behavior indicative of ferroelectric switching is observed in the capacitance–voltage characteristics with a memory window of approximately 2 V. The observation of ferroelectric behavior in these materials are promising for future multifunctional devices on GaAs." @default.
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• W1579870180 date "2004-10-11" @default.
• W1579870180 modified "2023-09-26" @default.
• W1579870180 title "Electronic properties of ferroelectric BaTiO3∕MgO capacitors on GaAs" @default.
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• W1579870180 doi "https://doi.org/10.1063/1.1804237" @default.
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