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• W1580433697 abstract "We have developed in this work a new characterization methodology which includes stressing and measurement in a single experimental step. This overcomes the influence of the hole detrapping effect in ultra-thin gate-oxides (T/sub OX/=1.4-1.6 nm) and enables comparison of gate-oxide nitridation impacts on negative bias temperature instability (NBTI). This new approach offers possibilities to measure the whole degradation and to improve DC NBTI characterization in operating logic circuits." @default.
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• W1580433697 date "2005-04-25" @default.
• W1580433697 modified "2023-09-27" @default.
• W1580433697 title "New hole trapping characterization during NBTI in 65nm node technology with distinct nitridation processing" @default.
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• W1580433697 doi "https://doi.org/10.1109/irws.2004.1422753" @default.
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