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• W1581407111 abstract "We review the performance and discuss the potential of GaN-based field effect transistors for high-power, high-temperature operation. Recent Monte Carlo simulations predict that GaN-based transistors operating at high voltages may outperform GaAs-based transistors even at room temperature. Our GaN/AlGaN doped channel HFETs (DC-HFETs) demonstrated highest frequency operation among all wide band gap semiconductor devices because of excellent transport properties of two dimensional electron gas at the AlGaN/GaN heterointerface and a large sheet carrier concentration in the device channel, with maximum frequency of oscillations above 100 GHz and cutoff frequency over 40 GHz." @default.
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• W1581407111 date "2002-12-23" @default.
• W1581407111 modified "2023-10-12" @default.
• W1581407111 title "Recent advances in III-V nitride electron devices" @default.
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• W1581407111 doi "https://doi.org/10.1109/iedm.1996.553114" @default.
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