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• W1581473966 abstract "Photoluminescence (PL) of an unintentionally doped Al0.5Ga0.5As/GaAs multiple quantum well (MQW) has been measured at temperatures from 5 to 400 K. It was found that the ratio of the intensity of the n=1 electron-light hole transition (1e-1lh) to that of the n=1 electron-heavy hole transition (1e-1hh) can be described by an exponential function of reciprocal temperature. The excitation-power dependence of the 1e-1hh transition PL intensity measured at temperatures from 5 to 296 K in steps of 15–20 K showed that the relative contribution of free-carrier recombination gradually increases from 5 to 120 K and then remains constant. This tendency was confirmed by the temperature dependence of the energy difference between the 1e-1hh transition and the bulk GaAs band gap." @default.
• W1581473966 created "2016-06-24" @default.
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• W1581473966 date "2009-11-01" @default.
• W1581473966 modified "2023-09-26" @default.
• W1581473966 title "Photoluminescence of an Al0.5Ga0.5As/GaAs multiple quantum well in the temperature range from 5 to 400 K" @default.
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• W1581473966 doi "https://doi.org/10.1063/1.3256222" @default.
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