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- W1583804576 abstract "制备了Au-SiO2-Si结构MIS隧道发光结.测试并分析了该结的发光特性及电流-电压(I-V)特性.指出结的发光是由各膜层界面激发的表面等离极化激元(Surface Plasmon Polariton.SPP)与膜层表面粗糙度相互耦合的结果.观察到MIS结I-V特性中存在的负阻现象，采用SPP对电子的束缚模型对这一现象进行了初步分析.利用原子力显微镜(AFM)对结的表面形貌进行了观测，由此讨论了MIS隧道结的发光与电子在结内的隧穿输运特性之间的内在关系." @default.
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- W1583804576 date "2000-01-01" @default.
- W1583804576 modified "2023-09-26" @default.
- W1583804576 title "NEGATIVE RESISTANCE PHENOMENON AND LIGHT EMISSION PROPERTY OF THE METAL-INSULATOR-SEMICONDUCTOR (Au-SiO2-Si) TUNNEL JUNCTION" @default.
- W1583804576 doi "https://doi.org/10.7498/aps.49.1159" @default.
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