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- W1583833815 abstract "We studied the temperature dependence of the 1/f noise for Au/AlGaN Schottky diodes under forward bias, both as‐grown and annealed. We ascribe the 1/f noise in the as‐grown diode to mobility fluctuations in the depletion region. Annealing the junction increases the noise level due to activation of defects. We also show that there are local inhomogeneities in the Schottky barrier at the metal‐semiconductor interface because of the high Al mole fraction which decreases the Schottky barrier." @default.
- W1583833815 created "2016-06-24" @default.
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- W1583833815 date "2005-01-01" @default.
- W1583833815 modified "2023-09-25" @default.
- W1583833815 title "Low-Frequency Noise In AlGaN-Based Schottky Barriers" @default.
- W1583833815 doi "https://doi.org/10.1063/1.1994169" @default.
- W1583833815 hasPublicationYear "2005" @default.
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