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• W1583838448 abstract "Porous silicon can be considered as a silicon crystal having a network of voids in it. The nano sized voids in the bulk silicon result in a sponge-like structure of pores and channels surrounded by a skeleton of crystalline Si nano wires. Porous silicon (PS) is gaining scientific and technological attention as a potential platform mainly for its multifarious applications in sensing and photonic devices (Canham, 1997a; Pavesi & Dubos;1997; Dimitrov,1995; Tsamis et al., 2002; Archer & Fauchet, 2003; Barillaro et al.,2003). The extremely large surface to volume ratio (500m2/cm3) of PS, the ease of its formation, control of the surface morphology through variation of the formation parameters and its compatibility to silicon IC technology leading to an amenability to the development of smart systems-on-chip sensors have made it a very attractive material. Due to these multi functional applications of PS, recently it has been proposed to be an educational vehicle for introducing nanotechnology and inter-disciplinary material science by eminent scientists working in this field. But in order to develop porous silicon based devices and their integration to electronic circuits the low resistance stable electrical contacts are necessary. However, unlike crystalline silicon the outstanding problem with PS is the instability of its native interface with a metastable Si–Hx termination (Tsai et al.,1991). The metastable hydrosilicon can undergo spontaneous oxidation in ambient atmosphere and results in the degradation of surface structures. This also creates problems to get a stable Ohmic contact (Deresmes et al.,1995; Stievenard & Deresmes, 1995) which is again a very important factor regarding its commercial applications. Therefore passivation of surface is necessary to make stable porous silicon based devices. For that purpose substituting surface hydrogen by another chemical species has appeared desirable. Oxidations (Rossi et al, 2001; Bsiesy, et al 1991; Petrova-Koch et al., 1992) nitradation (Anderson et al., 1993) and halogenetion (Lauerhaas & Sailor, 1993) are found to be useful for PS surface passivation. Derivatisation by organic groups and polymer (Lees et al. 2003; Mandal et al. 2006), offers an alternative possibility to stabilize the material. Metals like Cu, Ag, In etc. were also used to modify the porous silicon surface to stabilize its photoluminescence properties (Andsager et al 1994; Steiner et al., 1994). Surface modification of PS using noble metals like Pd and Pt has also been studied recently (Kanungo et al. 2009a). The details on PS are given in a comprehensive review published by Cullis et al. (Cullis et al., 1997) and in the handbook on Porous Silicon properties edited by Canham (Canham, 1997a). H. Foll et al. (Foll et al. 2002) and V. Parkhutik (Parkhutik, 1999) also elaborately reviewed the formation and applications of porous silicon." @default.
• W1583838448 created "2016-06-24" @default.
• W1583838448 creator A5015419640 @default.
• W1583838448 creator A5090378468 @default.
• W1583838448 date "2011-07-27" @default.
• W1583838448 modified "2023-10-16" @default.
• W1583838448 title "Nanocrystalline Porous Silicon" @default.
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