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- W158510947 abstract "This chapter discusses sputtering for very-large-scale-integration (VLSI). With the onset of VLSI device technology, the requirements for thin films employed in the devices created unique processing problems that have resulted in a need for similarly unique solutions. The technique of sputter deposition plays an important role in the fabrication of VLSI devices of contemporary design. With respect to future designs, it is quite conceivable that sputter deposition will also play an important role. In particular, as device geometries are reduced further, effective refractory metal diffusion barriers will still be required. Use of the co-sputtering technique to prepare low-resistance gate metal silicides will probably be done in production, especially as the problems with the processing of these materials are addressed and solved. The optimization of reliable sputter up and sputter sideways deposition systems may allow the use of magnetron-sputtered oxides and nitrides as chip-passivating and interlevel dielectric films." @default.
- W158510947 created "2016-06-24" @default.
- W158510947 creator A5024161643 @default.
- W158510947 date "1984-01-01" @default.
- W158510947 modified "2023-09-26" @default.
- W158510947 title "Sputtering for VLSI" @default.
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- W158510947 doi "https://doi.org/10.1016/b978-0-12-234108-3.50007-8" @default.
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