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- W1588052007 abstract "Abstract : The objectives of this research program are: (1) To investigate the grown-in defects and the effects of thermal and laser annealing on the grown-in defects in LEC grown Zn-doped InP, (2) to study the transport properties in n-type InP, (3) to characterize the grown-in defects vs annealing temperature in the LEC grown GaAs, and compare the deep-level defects in the MOCVD grown GaAs on semi-insulating GaAs- and Ge- substrates, (4) to study the one-MeV electron radiation induced deep level defects in LPE grown GaAs and the effects of thermal annealing on these defects. Deep-level Transient Spectroscopy (DLTS) Capacitance-Voltage (C-V), Current-Voltage (I-V), Resistivity, and Hall effect measurements were employed to study the deep-level defects and transport properties vs growth parameters and annealing conditions in GaAs and InP specimens. (Author)" @default.
- W1588052007 created "2016-06-24" @default.
- W1588052007 creator A5047430249 @default.
- W1588052007 date "1983-06-10" @default.
- W1588052007 modified "2023-09-23" @default.
- W1588052007 title "Study of Deep-Level Defects and Transport Properties vs Growth Parameters and Annealing Conditions in III-V Compound Semiconductors." @default.
- W1588052007 hasPublicationYear "1983" @default.
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