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• W1589766504 abstract "Largely reserved for military applications at the origin, the field of transmissions by electromagnetic waves is strongly prevalent in recent years with the emergence of new applications. Recent evolutions in modern civilian millimetre-wave applications, such as collision-avoidance radar sensor, inter-satellite communications, pico-cell networks, and microwave imaging have led to hardened constraints in terms of selectivity, performances, and bulk reduction. In this frequency range, a high level technological resolution is needed at low wavelength. This means that millimetre-wave monolithic integrated circuits (MWMICs) are generally preferred to hybrid technology. Moreover, with the constant evolution of systems in millimetre wave frequency range, the ever growing mass market forced the technological to reduce their costs of production. Thereby, technologies usually reserved to millimetre-wave applications, such as III-V technologies (InP or GaAs), have reduced their use for the benefit of silicon clusters. Indeed, III-V technologies have been for a long time the unique ones able to address millimetrewave applications. One of the major advantages of III-V technologies is their low loss level; nevertheless their cost is prohibitive for general public applications and limited to a small series production. Conversely, silicon technologies which are more economics, present level of losses too high to meet drastic specifications of actual systems, especially for passive functions. Thereby, recently many studies were led to take advantage of silicon technology for the integration of passive functions on active chip. The trend was reversed since Si-based technologies now offer competing performances. Si-based technologies are indeed cheaper, which is reinforced by their high integration capabilities. Then increasing efforts have been carried out during the past years to evaluate the potential of silicon technologies to address millimetre-wave applications. For instance, the 7 GHz unlicensed bandwidth around 60 GHz and 77 GHz for automotive radar applications has focussed many attention since large volumes can be expected for those applications. Due to its cost advantage, improved millimetre-wave transistor characteristics, and ease of integration of high performance digital and high speed analog/RF circuits, silicon has emerged as the favourite solution satisfying the needs of rapidly growing communications market, and is now a competitive 1" @default.
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• W1589766504 date "2010-03-01" @default.
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• W1589766504 title "Trend on Silicon Technologies for Millimetre-Wave Applications up to 220 GHz" @default.
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• W1589766504 doi "https://doi.org/10.5772/9066" @default.
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