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- W1589911038 abstract "Recently, GaN-based high-electron-mobility-transistor (HEMT) has demonstrated its promise in high frequency [1], high power [2] and low noise [3] electronic devices. The lattice matched InAlN/GaN HEMT structure provides a higher 2D electron density than AlGaN/GaN due to a larger bandgap offset and minimized short-channel-effects due to its thinner barrier. However, because of its several-nm thin barrier, those devices usually suffer from high gate leakage and interface trap issues, the device off-state performance is degraded and thereby the off-state breakdown voltage is decreased. Therefore, finding a good method to reduce the gate leakage and interface trap density is of great importance to improve the device off-state performance. In this study, we use atomic layer epitaxial MgCaO as gate dielectric to fabricate sub-100nm InAlN/GaN MOSHEMTs with significantly improved maximum drain current, current on/off ratio and low subthreshold swing." @default.
- W1589911038 created "2016-06-24" @default.
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- W1589911038 date "2015-06-01" @default.
- W1589911038 modified "2023-10-16" @default.
- W1589911038 title "InAlN/GaN MOSHEMTs with high drain current of 2.3 A/mm high on/off ratio of 10<sup>12</sup> and low SS of 64 mV/dec enabled by atomic-layer-epitaxial MgCaO as gate dielectric" @default.
- W1589911038 cites W2099582823 @default.
- W1589911038 doi "https://doi.org/10.1109/drc.2015.7175552" @default.
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