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• W1591846064 abstract "Successful integration of high performance Cu dual damascene interconnects (DDIs) using a low-k etch stop (LES, oxygen-doped carbide, k/spl sim/3.0) and a porous low-k IMD (OSG, k/spl sim/2.5) has been demonstrated for the first time. The Cu DDIs with the LES not only revealed excellent resistance to stress induced voiding (SIV) but also exhibited 21% better interconnect RC delay, 100% higher via-EM endurance, 100 times lower line-line leakage at 125/spl deg/C, and 5% faster device operation speed as compared to the DDIs with a currently used etch stop (CES, oxygen-doped carbide, k/spl sim/4.5)." @default.
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• W1591846064 date "2004-03-22" @default.
• W1591846064 modified "2023-09-25" @default.
• W1591846064 title "High performance 90/65nm BEOL technology with CVD porous low-k dielectrics (k∼2.5) and low-k etching stop (k∼3.0)" @default.
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• W1591846064 doi "https://doi.org/10.1109/iedm.2003.1269412" @default.
• W1591846064 hasPublicationYear "2004" @default.
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