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- W1592665301 abstract "Self-aligned four-terminal n-channel (n-ch) and p-channel (p-ch) planar embedded metal double-gate polycrystalline-silicon thin-film transistors (TFTs) were fabricated on a glass substrate at a low temperature of 550 °C. This device includes a metal top gate (TG) and a metal bottom gate (BG), which are used as the drive and control gates, or vice versa. The BG was embedded in a glass substrate, and a poly-Si channel with large lateral grains was fabricated using continuous-wave laser lateral crystallization. The threshold voltage modulations under various control gate voltages (γ = ΔV th /ΔV CG ) were nearly equal to the theoretical predictions in both the n-ch and p-ch TFTs. By using this high controllability, an E/D inverter was fabricated, and successful operation at V dd = 2.0 V was confirmed." @default.
- W1592665301 created "2016-06-24" @default.
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- W1592665301 date "2015-07-01" @default.
- W1592665301 modified "2023-09-26" @default.
- W1592665301 title "Controllability of self-aligned four-terminal planar embedded metal double-gate low-temperature polycrystalline-silicon thin-film transistors on glass substrate" @default.
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- W1592665301 doi "https://doi.org/10.1109/am-fpd.2015.7173258" @default.
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