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- W1592693756 abstract "Electron cyclotron resonance (ECR) O{sub 2} plasmas, in conjunction with electron-beam evaporation of Al, were used to grow thick AlO{sub x} films were varying but controlled composition and microstructure. The ion energy was varied from 30 to 190 eV, and growth temperatures varied from 35{degrees}C to 400{degrees}C. The ECR-film compositions were varied from AlO{sub 0.1} to Al{sub 2}O{sub 3} by controlling the plasma parameters and Al deposition rate. The Al-rich alloys exhibited a fine-grain (10-100 nm) fcc Al microstructure with {gamma}-Al{sub 2}O{sub 3} precipitates ({approximately}1 nm), similar to that found in the gigapascal-strength O-implanted Al. The measured hardness of the ECR Al-O alloys ({approximately}3 GPa) was also similar to the ion-implanted alloys which implies that the yield strength of the ECR material is {approximately}1 GPa. Moreover, the Al-O alloys retain much of the elasticity of the Al metal matrix. As-deposited stoichiometric Al{sub 2}O{sub 3} samples grown with an applied bias of -140 to -160 V at 400{degrees}C were fine-grain polycrystalline {gamma}-Al{sub 2}O{sub 3}. The amorphous films crystallized into the {gamma}-Al{sub 2}O{sub 3} phase upon vacuum annealing to 800{degrees}C." @default.
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- W1592693756 date "1995-03-01" @default.
- W1592693756 modified "2023-09-27" @default.
- W1592693756 title "ECR plasma-assisted deposition of Al{sub 2}O{sub 3} and dispersion-strengthened AlO{sub 2}" @default.
- W1592693756 hasPublicationYear "1995" @default.
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