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- W1592717424 abstract "Y 2 O 3 -TiO 2 composite film were deposited on Si substrate at room temperature by means of radio frequency magnetron sputtering. The crystalline state and topography of the film before and after annealing were measured by XRD and AFM, and the mechanism of the film being more compact was discussed. The result revealed that the evenness and compactness of the film can be improved with increasing the sputtering power, which is due to the fact of more Y 2 O 3 filling the pores around TiO 2 with raising sputtering power, which inhibited the growth of big TiO-2 grains and improved the evenness and compactness of film. After annealing, XRD pattern indicated that the addition of Y 2 O 3 favors the formation of rutile TiO 2 film which has high-dielectric constant." @default.
- W1592717424 created "2016-06-24" @default.
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- W1592717424 date "2011-01-01" @default.
- W1592717424 modified "2023-09-23" @default.
- W1592717424 title "Analysis of Y2O3 doped TiO2 films topography prepared by radio frequency magnetron sputtering" @default.
- W1592717424 doi "https://doi.org/10.7498/aps.60.037702" @default.
- W1592717424 hasPublicationYear "2011" @default.
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