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• W1592766790 abstract "We experimentally find that the ZnO thin films deposited by dc-magnetron sputtering have different conduction types after annealing at high temperature in different ambient. Hall measurements show that ZnO films annealed at 1100°C in N2 and in O2 ambient become n-type and p-type, respectively. This is due to the generation of different intrinsic defects by annealing in different ambient. X-ray photoelectron spectroscopy and photolumi-nescence measurements indicate that zinc interstitial becomes a main defects after annealing at 1100°C in N2 ambient, and these defects play an important role for n-type conductivity of ZnO. While the ZnO films annealed at 1100°C in O2 ambient, the oxygen antisite contributes ZnO films to p-type." @default.
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• W1592766790 date "2010-12-01" @default.
• W1592766790 modified "2023-10-16" @default.
• W1592766790 title "Effect of High Temperature Annealing on Conduction-Type ZnO Films Prepared by Direct-Current Magnetron Sputtering" @default.
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• W1592766790 doi "https://doi.org/10.1088/0256-307x/27/12/126802" @default.
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