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• W1593313963 abstract "FexGe1−x/Ge amorphous heterojunction diodes with p-FexGe1−x ferromagnetic semiconductor layers are grown on single-crystal Ge substrates of p-type, n-type and intrinsic semiconductors, respectively. The I—V curves of p-Fe0.4Ge0.6/p-Ge diodes only show slight changes with temperature or with magnetic field. For the p-Fe0.4Ge0.6/n-Ge diode, good rectification is maintained at room temperature. More interestingly, the I—V curve of the p-Fe0.4Ge0.6/i-Ge diode can be tuned by the magnetic field, indicating a large positive magnetoresistance. The resistances of the junctions decrease with the increasing temperature, suggesting a typical semiconductor transport behavior. The origin of the positive magnetoresistance is discussed based on the effect of the electric and magnetic field on the energy band structures of the interface." @default.
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• W1593313963 date "2011-10-01" @default.
• W1593313963 modified "2023-09-26" @default.
• W1593313963 title "Electric and Magnetic Field Tunable Rectification and Magnetoresistance in Fe x Ge 1− x /Ge Heterojunction Diodes" @default.
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• W1593313963 doi "https://doi.org/10.1088/0256-307x/28/10/107501" @default.
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