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- W1593926641 abstract "The basic problems of the receiving p-n junctions in ion implanted Mg/sup +//InSb after CO/sub 2/-laser irradiation and in p-InSb and p-InAs after ruby laser irradiation are represented. Proper volt-ampere characteristics are analyzed. The basic physical mechanisms of receiving these structures are discussed too. A basic cause of the difference these p-n junctions is various mechanisms of irreversible interaction light and semiconductor (self-absorption for ruby laser irradiation and damage-absorption for CO/sub 2/-laser irradiation)." @default.
- W1593926641 created "2016-06-24" @default.
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- W1593926641 date "2006-01-05" @default.
- W1593926641 modified "2023-09-26" @default.
- W1593926641 title "The problem of the creation stable P-N junctions with help the methods of relaxed optics in InSb and InAs" @default.
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- W1593926641 doi "https://doi.org/10.1109/caol.2005.1553879" @default.
- W1593926641 hasPublicationYear "2006" @default.
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