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- W1594012000 abstract "Porous silicon (PS) as an excellent light diffuser can be used as an antireflection layer without other antireflection coating (ARC) materials. PS layers were obtained by electrochemical etching (ECE) anodization of silicon wafers in hydrofluoric acid/ethanol/de- ionized (DI) water solution (HFlEtOH/H₂O). This technique is based on the selective removal of Si atoms from the sample surface forming a layer of PS with adjustable optical, electrical, and mechanical properties. A PS layer with optimal antireflection characteristics was obtained in charge density (Q) of 5.2 C/㎠. The weighted reflectance is reduced from 33％ to 4％ in the wavelength between 400 and 1000 nm. The weighted reflectance with optimized PS layers iS,much less than that obtained with a commercial SiNx ARC on a potassium hydroxide (KOH) pre-textured multi-crystalline silicon (mc-Si) surface." @default.
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- W1594012000 date "2004-10-01" @default.
- W1594012000 modified "2023-09-24" @default.
- W1594012000 title "Antireflective Layer Using Anodization for Multicrystalline Silicon Solar Cells" @default.
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