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• W1594472716 abstract "In this work, the morphological, structural, and electrical properties of Ti/Al/W contacts to p-type implanted silicon carbide (4H-SiC) have been monitored as a function of the annealing temperature (800–1100 °C). The increase of the annealing temperature induces a transition from a rectifying to an Ohmic behavior, with a specific contact resistance of 5.8 × 10−4 Ωcm2. The electrical behavior has been correlated with the morphological and structural analyses. In particular, the transition to an Ohmic behavior was accompanied by a gradual increase of the surface roughness and by the occurrence of a reaction leading to the formation of new phases in the stack and at the interface (TiAl3, W(SiAl)2, and TiC). The presence of Al-rich protrusions penetrating in the SiC substrate was also observed. From the temperature dependence of the electrical parameters, a barrier height of 0.69 eV for this system was determined. The thermal stability of the contacts has been demonstrated for long-term (up to 100 h) thermal cycling at 400 °C." @default.
• W1594472716 created "2016-06-24" @default.
• W1594472716 creator A5003937299 @default.
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• W1594472716 date "2015-07-21" @default.
• W1594472716 modified "2023-10-16" @default.
• W1594472716 title "Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC" @default.
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• W1594472716 doi "https://doi.org/10.1063/1.4927271" @default.
• W1594472716 hasPublicationYear "2015" @default.
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