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- W1594530378 abstract "Hall and resistivity measurements as functions of temperature were used to study the segregation of phosphorus in atmospheric-pressure chemical-vapor deposited, ∼300-nm-thick, polycrystalline Si0.95Ge0.5 and Si0.9Ge0.1 thin films, implanted at 80 keV with 6×1013–5×1014 P/cm2, and annealed for 1 h at 800 °C. Hall measurements, feasible only in heavily doped films, indicated that 29% of the dopant in Si0.9Ge0.1 and 42% of the dopant in Si0.95Ge0.05 were electrically inactive. The loss is consistent with dopant segregation to grain boundaries. The density of grain-boundary carrier traps is 3.6×1012/cm2 in Si0.95Ge0.05 and 4.4×1012/cm2 in Si0.9Ge0.1, increasing sublinearly with Ge content." @default.
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- W1594530378 date "2002-06-19" @default.
- W1594530378 modified "2023-09-26" @default.
- W1594530378 title "Resistivity and Hall voltage study of phosphorus segregation in polycrystalline Si1−xGex films" @default.
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- W1594530378 doi "https://doi.org/10.1063/1.1483923" @default.
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