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- W1596403774 abstract "Abstract : The GaInP2 n(+)-p junction diode has recently become important to the development of high efficiency GaInP2/GaAs dual junction solar cells, which have a demonstrated air mass 1.5 conversion efficiencies in excess of 27%. In order to study the effects of long term exposure to the space environment, the GaInP2 n(+)-p junction diodes were irradiated with a 1 MeV electron beam with a fluence of 10(exp 16) electrons/sq cm. Since little is known about deep level defects (traps) in GaInP2, a deep level transient spectroscopy (DLTS) study was made to characterize the traps that are thought to dominate the dark current in GaInP2 solar cells. The measurements indicated that there are a number of majority carrier traps in the p-type base of the GaInP2 n+-p junction diode. Traps that are identified are located 0.12 to 0.55 eV above the valence band and are attributed to phosphorous vacancies in the lattice." @default.
- W1596403774 created "2016-06-24" @default.
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- W1596403774 date "1993-12-01" @default.
- W1596403774 modified "2023-09-23" @default.
- W1596403774 title "Electrical properties of p-type GaInP2" @default.
- W1596403774 hasPublicationYear "1993" @default.
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